CMOS RF Circuit Design for Reliability and Variability by Jiann-Shiun Yuan

By Jiann-Shiun Yuan

The topic of this ebook is CMOS RF circuit layout for reliability. The gadget reliability and strategy edition matters on RF transmitter and receiver circuits should be specific curiosity to the readers within the box of semiconductor units and circuits. This proposed booklet is exclusive to discover regular reliability concerns within the machine and know-how point after which to envision their impression on RF instant transceiver circuit functionality. Analytical equations, experimental info, machine and circuit simulation effects can be given for transparent rationalization. the most profit the reader derive from this e-book can be transparent realizing on how machine reliability matters impacts the RF circuit functionality subjected to operation getting older and approach variations.

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The voltage Vtune is used to tune the capacitance of varactors and the oscillation frequency. The VCO can also be designed with only the inductors L1 without the inductor L2 with smaller sized inductor. The cross-coupled pair (M1 and M2) generates a negative transconductance to compensate for the LC tank loss. The n-core rather than p-core VCO topology is chosen since the nMOS has larger transconductance gain than pMOS. A key to achieving wide-tuning range is minimizing the parasitic capacitances connected to the tank.

IEEE Microwave Wireless Compon Lett 20:459–461 17. Yen HD, Yuan JS, Wang RL, Huang GW, Yeh WK, Huang FS (2012) RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments. Microelectron Reliab 52: 2655–2659 18. Yu C, Yuan JS (2005) MOS RF reliability subject to dynamic voltage stress—modeling and analysis. IEEE Trans Electron Devices 52:1751–1758 19. Ling CH, Ang DS, Tan SE (1995) Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFETs.

2 V. The oscillation frequency measured is slightly lower than the simulated value due to layout parasitic, interconnections, and bonding pad effects. The frequency range measured is suitable for wireless communications services. After RF and increased VDD stresses, the oscillation frequency increases. 424 GHz after 10 h of stress, at the tuning voltage of 0 V. Hot electron stress decreases the gate-drain capacitance and increases the gate-source capacitance of SiO2 MOSFETs [18, 19]. The decrease in gate-drain capacitance is larger than the increase in gate-source capacitance.

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