By Andrei Grebennikov, Narendra Kumar, Binboga S. Yarman
Broadband RF and Microwave Amplifiers offers wide insurance of broadband radio frequency (RF) and microwave energy amplifier layout, together with recognized old and up to date novel schematic configurations, theoretical techniques, circuit simulation effects, and useful implementation options. The textual content starts off by way of introducing two-port networks to demonstrate the habit of linear and nonlinear circuits, explaining the fundamental rules of energy amplifier layout, and discussing impedance matching and broadband strength amplifier layout utilizing lumped and disbursed parameters. The publication then:
- Shows how dissipative or lossy gain-compensation-matching circuits can provide a major trade-off among strength achieve, mirrored image coefficient, and working frequency bandwidth
- Describes the layout of broadband RF and microwave amplifiers utilizing genuine frequency options (RFTs), delivering various examples in keeping with the MATLAB® programming process
- Examines Class-E strength amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications
Broadband RF and Microwave Amplifiers combines theoretical research with useful layout to create an outstanding beginning for leading edge rules and circuit layout techniques.
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Additional resources for Broadband RF and Microwave Amplifiers
18 Microstrip-line characteristic impedance versus W/h. 147 . 153) Conductor loss is a result of several factors related to the metallic material composing the ground plane and walls, among which are conductivity, skin effect, and surface ruggedness. For most microstrip lines (except for some kinds of semiconductor substrate such as silicon), the conductor loss is much more significant than the dielectric loss. The conductor losses increase with increasing characteristic impedance due to greater resistance of narrow strips.
134) which represents the transmission equations of the symmetrical reciprocal two-port network expressed through the ABCD-parameters when AD – BC = 1 and A = D. 136) where θ = βl is the electrical length of the transmission line. 138) where Γ represents the load reflection coefficient and Z = ZL = V(l)/I(l). If the load is mismatched, only part of the available power from the source is delivered to the load. 139) For a matched load when Γ = 0, a return loss is of ∞ dB. A total reflection with Γ = 1 means a return loss of 0 dB when all incident power is reflected.
38 × 10−23 J/K is the Boltzmann constant, T is the absolute temperature, and kT = 4 × 10−21 W/Hz = −174 dBm/Hz at ambient temperature T = 290 K. The thermal noise is proportional to the frequency bandwidth Δf, and it can be represented by the voltage source in series with resistor R, or by the current source in parallel to the resistor R. The maximum noise power can be delivered to the load when R = RL, where RL is the load resistance, being equal to kTΔf. Hence, the noise power density when the noise power is normalized by Δf is independent of frequency and is considered as white noise.