Bismuth-Containing Compounds by Yuxin Song, Yi Gu, Jun Shao, Shumin Wang (auth.), Handong

By Yuxin Song, Yi Gu, Jun Shao, Shumin Wang (auth.), Handong Li, Zhiming M. Wang (eds.)

Bismuth-containing compounds include a comparatively unexplored fabrics procedure that's anticipated to supply many special and fascinating optoelectronic, thermoelectric, and digital homes for leading edge equipment functions. This e-book serves as a platform for wisdom sharing and dissemination of the newest advances in novel components of bismuth-containing compounds for fabrics and units, and gives a accomplished advent to these new to this transforming into box. insurance of bismides contains theoretical concerns, epitaxial progress, characterization, and fabrics homes (optical, electric, and structural). as well as the well-studied sector of hugely mismatched Bi-alloys, the ebook covers rising themes corresponding to topological insulators and ferroelectric fabrics. equipped upon basic technology, the booklet is meant to stimulate curiosity in constructing new sessions of semiconductor and thermoelectric fabrics that take advantage of the houses of Bismuth. software components for bismide fabrics comprise laser diodes for optical communications, DVD structures, light-emitting diodes, sunlight cells, transistors, quantum good lasers, and spintronic devices.

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Reported the dependence of InAsBi band-gap on the Bi content to be 42 meV/%Bi using absorption-coefficient and PL spectra [45]. 686 Å was used in the determination of Bi composition [46]. 037 by optical-­ transmission measurement. 29 meV/K) whose energy gap is smaller than that of InAsBi. This fact confirms the effect of Bi incorporation on decreasing the ΔEg/ΔT. The optical properties have also been studied by Raman spectroscopy [47]. Bi- and As-related vibrational modes were observed. Bi-related vibrational modes indicate that the solubility of Bi is better in GaAs than in InAs.

Appl. Phys. : Investigation of novel InTlSb and InSbBi alloys for uncooled ­photodetector applications. J. ) Photodetectors: Materials and Devices III, pp. 256–269. SPIE-INT Soc Optical Engineering, Bellinghan, USA (1998) 26 Y. Song et al. : Exploration of InSbBi for un cooled long-wavelength infrared photodetectors. Opto-Electr. Rev. : Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates. Appl. Phys. Lett. : Exploration of novel InSbBi alloy for uncooled infrared photodetector applications.

J. Cryst. : Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi. Appl. Phys. Lett. : Growth of metastable alloy InAsBi by low-pressure MOVPE. Jpn. J. Appl. Phys. 37, 1608–1613 (1998) 42. : InAsBi alloys grown by organometallic vapor phase epitaxy. J. Cryst. Growth 134, 29–34 (1993) 43. : Investigation of organometallic vapor phase epitaxy of InAs and InAsBi at temperatures as low as 275 °C. J. Appl. Phys. : Ultra-low temperature OMVPE of InAs and InAsBi. J. Electron.

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