A first look at Dylan.Classes,functions,and modules by Strassman S.

By Strassman S.

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Properties of semiconductor alloys: group-IV, III-V and II-VI semiconductors

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1978). Appl. Phys. Lett. 33, 651. 1. , Josh, M. , and Burgess, M. R. Acto Electronica 15, 5. Bayliss, C. , and Kirk, D. C. (1975). Thin Solid Films 29,97. Bell, A. E. (1979). RCA Review 40,295. Bennett, A. , and Duke, C. B. (1967). Phys. Rev. 162,578. Benninghoven, A. (1973). Appl. Phys. 1, 3. , and Kasami, A. (1977). IEEE Trans. Efectron Devices 24, 951. Berger, H. H. (1972a). J. Electrochem. Soc. 119, 507. Berger, H. H. (1972b). Solid-State Electron. 15, 145. Bergh, A. J. In “Ohmic Contacts to Semiconductors” (B.

4, 363. , and Inuishi, Y. (1976). Jpn. J. Appl. Phys. 15, 991. Suleimanov, S. G. (1977). Sou. -Semicond. 11, 844 [Fiz. Tekh. Poluprovodn. 11, 1433 ( 1977)]. Sullivan, A. B. J. (1976). Electron. Lett. 12, 133 Sze, S. M. (1969). ” Wiley (Interscience), New York. , and Gergely, G. Proc. Int. Vac. , 7th, Int. Conf. , Vienna 3, 1959. , and Sasaki. A. (1975). J. Vac. Sci. Technol. 12, 1128. 38 B. L. , and Sasaki, A. (1976). Thin Solid Films 39, 207. , Baker, W. , and Milnes, A. G. (1969). Znt. J. Electron.

The wire bonding is usually carried out by either the thermocompression or the ultrasonic bonding technique (Fogiel, 1968). , 1972; Dale, 1966) for producing such layers. However, it has been observed that it is difficult to produce by these techniques uniform layers that are less than a few tenths of a micron in thickness. , 1979; Barnes and Cho, 1978) can be used for growing such buffer layers and it may be possible, in the future, to do away with the subsequent alloying in some particular cases.

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